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Crystalline Defects in Silicon (Page 2 of 3)
<Proceed to Page 3 - Area and Volume
Defects>
Crystal line
defects
are also known as
'dislocations',
which can be classified as one of the following: 1) edge dislocation; 2)
screw dislocation; or 3) mixed dislocation, which contains both edge and
screw dislocation components.
An
edge
dislocation
may be
described as an extra plane of atoms squeezed into a part of the crystal
lattice, resulting in that part of the lattice containing extra atoms
and the rest of the lattice containing the correct number of atoms.
The part with extra atoms would therefore be under compressive stresses,
while the part with the correct number of atoms would be under tensile
stresses.
Figure 1.
An edge dislocation; note the insertion
of atoms in the upper part of the lattice
If the
dislocation is such that a step or ramp is formed by the displacement of atoms
in a plane in the crystal, then it is referred to as a
'screw
dislocation.'
The
screw basically forms the boundary between the slipped and unslipped
atoms in the crystal. Thus, if one were to trace the periphery of a
crystal with a screw dislocation, the end point would be displaced from
the starting point by one lattice space.
Figure 2.
A screw dislocation; note the screw-like
'slip' of atoms in the upper part of the lattice
If the
dislocation consists of an extra plane of atoms (or a missing plane of
atoms) lying entirely within the crystal, then the dislocation is known
as a
'dislocation loop.'
T
Dislocations
are generally undesirable in silicon wafers because they serve as sinks
for metallic impurities as well as disrupt diffusion profiles.
However, the ability of dislocations to sink impurities may be
engineered into a wafer fabrication advantage. i.e., it may be used in
the removal of impurities from the wafer, a technique known as
'gettering.'
<Proceed to Page 3 - Area and
Volume Defects>
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