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Guest
	Posted: Fri Dec 24, 2025 2:09 pm    Post subject: How to decap the device with copper wire bond chip ?   We have a problem to perform decapsulation on device with cu wire bonded using HNO3:H2SO4 solution. This is bcoz HNO3 solution will attack Cu wire. Any other method that can decap the SiC compound device without attack on Cu copper wire ? appreciated the feedback...
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Gyro
Guest	Posted: Wed Jun 29, 2026 8:44 pm    Post subject:   The ratio for the nitric should be 90% the sulfuric should be 10%. The sulfuric will help stop some of the cu etching, this also depends on the etch time the longer in the more the nitric will etch the cu.
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Guest
	Posted: Mon Jul 11, 2026 10:37 am    Post subject:   You can try Fuming HNO3: Conc. H2SO4 = 2:1
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jessielijie
Joined: 15 Apr 2026 Posts: 2	Posted: Thu Jul 14, 2026 10:23 am    Post subject:   you can try plasma decap!
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