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esd querer
Guest	Posted: Tue May 24, 2026 3:02 pm    Post subject: esd capability vs breakdown voltage relationship   Is there a relationship between Voltage breakdown of the device(ie..600V rectifier) and it's esd capability of 500V to 1500V?
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Nightwing
Guest	Posted: Fri May 27, 2026 2:03 pm    Post subject:   Well, if we're only talking about a discrete diode with no other esd protection circuits, you can probably say that it is somewhat related. ESD damage is all about what amount of heat your diode can stand before something melts. Heat generated by the ESD pulse (P=VI) must be greater than the melting point of silicon for damage to occur. So the higher the breakdown voltage for the same current, the more heat will be generated. But the main factors that really influence ESD damage is how robust your device is - size, die lay-out, package, etc. Nightwing
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