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What
is a semiconductor?
Semicon Manufacturing
Si, Ge,
GaAs Properties
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Lattice
Constants
A
crystal
is a
material that has an orderly and periodic arrangement of atoms in
three-dimensional space. The repetitive arrangement of atoms in a
crystal is called a
lattice.
The smallest volume in a lattice that represents one full repetition of
its periodic atom arrangement is called a
unit cell.
The manner in which the atoms are arranged in a unit cell is known as
its
crystal structure.
The crystal structure of the unit cell is always the same as that of a
bigger chunk of the crystal, so a given bulk of crystal may be studied
using just a small representative sample thereof.
The lengths
of the edges of a unit cell along its major axes are known as
lattice
constants,
which are usually denoted by three numbers, a, b, and c. In some
crystal structures, however, the edge lengths along all axes are equal (a=b=c), so only
one lattice constant is used for its dimensional description, a.
Lattice
constant values and knowledge of crystal structure are needed to calculate distances
between neighboring atoms in a crystal, as well as in determining some of
the crystal's important physical and electrical properties. Note
that, depending on the crystal structure, the distance between two
neighboring atoms in a lattice may be less than the lattice constant. Table 1 shows the crystal structures and lattice constants of some
semiconductors.
Table 1.
Lattice Constants and Crystal Structures of
some
Semiconductors and Other Materials
|
Element
or Compound |
Type |
Name |
Crystal
Structure |
Lattice
Constant at 300 K (Å) |
|
C |
Element |
Carbon
(Diamond) |
Diamond |
3.56683 |
|
Ge |
Element |
Germanium |
Diamond |
5.64613 |
|
Si |
Element |
Silicon |
Diamond |
5.43095 |
|
Sn |
Element |
Grey Tin |
Diamond |
6.48920 |
|
SiC |
IV-IV |
Silicon
carbide |
Wurtzite |
a=3.086;
c=15.117 |
|
AlAs |
III-V |
Aluminum
arsenide |
Zincblende |
5.6605 |
|
AlP |
III-V |
Aluminum
phosphide |
Zincblende |
5.4510 |
|
AlSb |
III-V |
Aluminum
antimonide |
Zincblende |
6.1355 |
|
BN |
III-V |
Boron
nitride |
Zincblende |
3.6150 |
|
BP |
III-V |
Boron
phosphide |
Zincblende |
4.5380 |
|
GaAs |
III-V |
Gallium
arsenide |
Zincblende |
5.6533 |
|
GaN |
III-V |
Gallium
nitride |
Wurtzite |
a=3.189;
c=5.185 |
|
GaP |
III-V |
Gallium
phosphide |
Zincblende |
5.4512 |
|
GaSb |
III-V |
Gallium
antimonide |
Zincblende |
6.0959 |
|
InAs |
III-V |
Indium
arsenide |
Zincblende |
6.0584 |
|
InP |
III-V |
Indium
phosphide |
Zincblende |
5.8686 |
|
InSb |
III-V |
Indium
antimonide |
Zincblende |
6.4794 |
|
CdS |
II-VI |
Cadmium
sulfide |
Zincblende |
5.8320 |
|
CdS |
II-VI |
Cadmium
sulfide |
Wurtzite |
a=4.160;
c=6.756 |
|
CdSe |
II-VI |
Cadmium
selenide |
Zincblende |
6.050 |
|
CdTe |
II-VI |
Cadmium
telluride |
Zincblende |
6.482 |
|
ZnO |
II-VI |
Zinc
oxide |
Rock
Salt |
4.580 |
|
ZnS |
II-VI |
Zinc
sulfide |
Zincblende |
5.420 |
|
ZnS |
II-VI |
Zinc
sulfide |
Wurtzite |
a=3.82;
c=6.26 |
|
PbS |
IV-VI |
Lead
sulfide |
Rock
Salt |
5.9362 |
|
PbTe |
IV-VI |
Lead
telluride |
Rock
Salt |
6.4620 |
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