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Diode-Transistor Logic (DTL)
RTL
allows the construction of NOR gates easily, but NAND gates are
relatively more difficult to get from RTL. DTL, however, allows the
construction of simple NAND gates from a single transistor, with the
help of several
diodes and resistors.
See Also:
Figure 1.
A simple 3-input DTL NAND Gate
In the NAND gate in Figure
1, the current through diodes DA and DB will only be large enough to
drive the transistor into saturation and bring the output voltage Vo to
logic '0' if all the input diodes D1-D3 are 'off', which is true when
the inputs to
all
of them are logic
'1'. This is because when D1-D3 are not conducting, all the
current from Vcc through R will go through DA and DB and into the base
of the transistor, turning it on and pulling Vo to near ground.
However, if
any
of the diodes D1-D3 gets an
input voltage of logic '0', it gets forward-biased and starts
conducting. This conducting diode 'shunts' almost all the current away
from the reverse-biased DA and DB, limiting the transistor base current.
This forces the transistor to turn off, bringing up the output voltage
Vo to logic '1'.
One
In a DTL
circuit, the collector output of the driving transistor is separated
from the base resistor of the driven transistor by several diodes.
Circuit analysis would easily show that in such an arrangement, the
differences between Vil and Vol, and between Voh and Vih, are much
larger than those exhibited by RTL gates, wherein the collector of the
driving transistor is directly connected to the base resistor of the
driven transistor. This is why DTL gates are known to have
better noise
margins
than
RTL
gates.
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